Electronics, Photonics and Magnetic Devices

TheElectronics, Photonics and Magnetic Devices (EPMD) Programsupports innovative research on novel devices based on the principles of electronics, optics and photonics, optoelectronics, magnetics, opto- and electromechanics, electromagnetics, and related physical phenomena.

EPMD’s goal

is to advance the frontiers of micro-, nano- and quantum-based devices operating within the electromagnetic spectrum and contributing to a broad range of application domains including information and communications, imaging and sensing, healthcare, Internet of Things, energy, infrastructure, and manufacturing.

The program encourages research based on emerging technologies for miniaturization, integration, and energy efficiency as well as novel material-based devices with new functionalities, improved efficiency, flexibility, tunability, wearability, and enhanced reliability.

Areas managed by Program Directors (please contact Program Directors listed in the <a href="https://www.nsf.gov/staff/staff_list.jsp?orgId=94&amp;subDiv=y&amp;org=ECCS&amp;from_org=ECCS">EPMD staff directory</a> for areas of interest):
Electronic Devices <ul> <li>Nanoelectronics</li> <li>Wide/Extreme- and Narrow-Bandgap, Semiconductor Devices</li> <li>Devices with New Functionalities based on Material-Device Interactions and Reliability</li> <li>Device-Related Electromagnetic Effects, Propagationand Scattering</li> <li>Microwave/mm-Wave/THz Devices</li> <li>Flexible, Printed Electronics</li> <li>Carbon-based Electronics</li> <li>Thermoelectric and Ferroelectric Devices</li> </ul> Photonic Devices <ul> <li>Advanced Optical Emitters and Photodetectors, from Extreme UV to THz</li> <li>Single-Photon Quantum Devices</li> <li>Nonlinear and Ultrafast Photonics</li> <li>Nanophotonics and Photonic Integration</li> <li>Optical Imaging and Sensing Techniques</li> <li>Opto-Mechanical Nanodevices</li> <li>Optical Communication Components</li> </ul> Magnetic Devices <ul> <li>Biomagnetic Devices</li> <li>Nanomagnetic and Quantum Devices</li> <li>Spin Electronics for Next Generation of Logic and Memories</li> </ul> Cross-Cutting <ul> <li>2D Material Devices and Circuits</li> <li>Devices based on Paper Electronics</li> <li>Bioelectronic Devices</li> <li>Photovoltaic and Energy Harvesting Devices</li> <li>Metamaterial and Plasmonic-Based Devices</li> <li>Sensor Device Technologies</li> </ul>
Agency: National Science Foundation

Office: National Science Foundation

Estimated Funding: $1,500,000

Who's Eligible

Obtain Full Opportunity Text:
NSF Program Desccription PD-18-1517

Additional Information of Eligibility:
Applicants MUST be invited by DHS to apply.

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Edited by: Michael Saunders

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